 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor product specification silicon npn power transistors 2n5881 2N5882 description ? with to-3 package ? low collector saturation voltage ? complement to type 2n5879 2n5880 applications ? for general-purpose power amplifier and switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n5881 60 v cbo collector-base voltage 2N5882 open emitter 80 v 2n5881 60 v ceo collector-emitter voltage 2N5882 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current-peak 30 a i b base current 5 a p d total power dissipation t c =25 ?? 160 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.1 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n5881 2N5882 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n5881 60 v ceo(sus) collector-emitter sustaining voltage 2N5882 i c =0.2a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =7a;i b =0.7a 1.0 v v cesat-2 collector-emitter saturation voltage i c =15a;i b =3.75a 4.0 v v besat base-emitter saturation voltage i c =15a;i b =3.75a 2.5 v v be base-emitter on voltage i c =6a ; v ce =4v 1.5 v i cbo collector cut-off current v cb =ratedv cbo ; i b =0 0.5 ma 2n5881 v ce =30v; i b =0 i ceo collector cut-off current 2N5882 v ce =40v; i b =0 1.0 ma i cex collector cut-off current v ce =ratedv ce ; v be =1.5v t c =150 ?? 0.5 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =2a ; v ce =4v 35 h fe-2 dc current gain i c =6a ; v ce =4v 20 100 h fe-3 dc current gain i c =15a ; v ce =4v 4 f t trainsistion frequency i c =1a ; v ce =10v 4 mhz inchange semiconductor product specification 3 silicon npn power transistors 2n5881 2N5882 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
Price & Availability of 2N5882
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |